Comparative Evaluation of Free-Standing 3C-SiC Crystals
p.229
p.229
Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
p.233
p.233
Microfabrication of Si Column Covered with SiC Film for Electron Emitter
p.237
p.237
Formation of Ferromagnetic SiC:Mn Phases
p.241
p.241
Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix
p.245
p.245
A Short Synopsis of the Current Status of Porous SiC and GaN
p.251
p.251
Preparation of Porous 4H-SiC by Surface Anodization
p.257
p.257
Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization
p.261
p.261
X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
p.265
p.265
Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix
Abstract:
Two-dimensional model of conjugate heat and mass transport in Chemical Vapour Infiltration (CVI) process was developed. The model was used for simulation of Isothermal CVI production of SiC matrix composite. Flow pattern, thermal field and distributions of species concentrations in the gas region of the reactor and in the porous preform were analysed. Temperature and species concentration distributions were found to be noticeably non-uniform. The non-uniformity of parameter distributions leads to non-uniform densification of the preform both along the preform thickness and height.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
245-248
Citation:
Online since:
May 2005
Authors:
Price:
Permissions: