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Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
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Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
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Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
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Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
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Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
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Stress Control in 3C-SiC Films Grown on Si(111)
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Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
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Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows
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Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Influence of the Ge Coverage Prior to...

Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

297-300

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.297

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Online since:

June 2004

Authors:

Francisco M. Morales, Charbel Zgheib, S.I. Molina, Daniel Araujo, R. García, C. Fernández, A. Sanz-Hervás, Pierre M. Masri, Petia Weih, Thomas Stauden, Oliver Ambacher, J. Pezoldt

Keywords:

3C-SiC Heteroepitaxy, FT-IR, Germanium, SIMS, TEM, X-Ray Diffraction (XRD)

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