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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Radiation-Induced Defects in 4H- and 6H-SiC...

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

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Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

489-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.489

Citation:

Cite this paper

Online since:

April 2002

Authors:

Atsuo Kawasuso, Michael Weidner, F. Redmann, Thomas Frank, Reinhard Krause-Rehberg, Gerhard Pensl, Peter Sperr, Werner Triftshäuser, Hisayoshi Itoh

Keywords:

Deep-Level Transient Spectroscopy, Electron Irradiation, Positron Annihilation, Vacancy

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