Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature Oxidation
p.989
p.989
Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
p.993
p.993
Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment
p.997
p.997
New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
p.1001
p.1001
On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures
p.1005
p.1005
Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
p.1009
p.1009
The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements
p.1013
p.1013
Characteristics of Mobile Ions in the SiO2 Films of SiC-MOS Structures
p.1017
p.1017
Abnormal Hysteresis Property of SiC Oxide C-V Characteristics
p.1021
p.1021
On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1005-1008
Citation:
Online since:
April 2002
Authors:
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