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MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures
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Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films
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Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire
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Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Magnetron Sputter Epitaxy of Gallium Nitride on...

Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1229-1234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1229

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Online since:

February 1998

Authors:

J.B. Webb, D. Northcott, S. Charbonneau, Fan Yang, D.J. Lockwood, O. Malvezin, P. Singh, John Corbett

Keywords:

Epitaxy, Gallium Nitride (GaN), Magnetron, Photoluminescence (PL), RAMAN, Sputter-Epitaxy, TEM, X-Ray

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