Exciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending Investigation
p.599
p.599
Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells
p.605
p.605
Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells
p.611
p.611
Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures
p.617
p.617
DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
p.623
p.623
Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
p.629
p.629
Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
p.635
p.635
Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
p.641
p.641
Si Diffusion out of δ-Planes in a GaAs Superlattice
p.647
p.647
DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
623-628
Citation:
Online since:
October 1993
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