An Overview of the Diffusion Studies in the V-Si System

Article Preview

Abstract:

The diffusion study in the V-Si system is reviewed. We show that the indirect method used previously to determine the diffusion parameters draws unnecessary error. Rather the method developed by Wagner should be used to calculate the diffusion parameters directly from the composition profile.

You might also be interested in these eBooks

Info:

Periodical:

Defect and Diffusion Forum (Volumes 312-315)

Pages:

731-736

Citation:

Online since:

April 2011

Export:

Price:

[1] J.J. Petrovic, R.E. Honnell, W.S. Gibbs: US patent 4970179.

Google Scholar

[2] A.D. Remenyuk and N. M Schmidt: Applied Surface Science Vol. 91(1995), p.352.

Google Scholar

[3] H.A.C.M. Bruning: Philips Res. Rep. Vol. 22 (1967), p.349.

Google Scholar

[4] C. Milanese, V. Buscaglia, F. Maglia, U. Anselmi-Tamburini: Acta Materialia Vol. 50 (2002), 1393.

DOI: 10.1016/s1359-6454(01)00445-1

Google Scholar

[5] A.K. Kumar, T. Laurila, V. Vuorinen and A. Paul: Scripta Mater. Vol. 60 (2009), p.377.

Google Scholar

[6] C. Wagner: Acta Met. Vol. 17 (1969), p.99.

Google Scholar

[7] V. Buscaglia, U. Anselmi-Tamburini: Acta Mater Vol. 50 (2002), p.525.

Google Scholar