Interference Characteristics Analysis of Power Electronics Devices Used in New Energy Vehicles

Yan Jie Guo; Li Fang Wang; Cheng Lin Liao

doi:10.4028/www.scientific.net/AMR.772.556

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 772Interference Characteristics Analysis of Power...

Interference Characteristics Analysis of Power Electronics Devices Used in New Energy Vehicles

Abstract:

In this paper, the insulated gate bipolar transistor (IGBT) is taken as an example to discuss the interference characteristics of the power electronics devices used in new energy vehicles. Firstly, the on-off processes of the IGBT are analyzed and reconstructed. Then, the high frequency circuit model of IGBT is established, considering both the on-off processes and the effects of the stray parameters. Furthermore, the effects of IGBT on equipment around are investigated based on the calculations of interference voltage transfer gains and common mode (CM) current transfer admittance. Finally, the model and analyses are verified by both the simulations and the experiments.

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Periodical:

Advanced Materials Research (Volume 772)

Pages:

556-559

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.772.556

Citation:

Cite this paper

Online since:

September 2013

Authors:

Yan Jie Guo, Li Fang Wang, Cheng Lin Liao

Keywords:

Electromagnetic Compatibility (EMC), Electromagnetic Interference (EMI), Insulated Gate Bipolar Transistor (IGBT), New Energy Vehicle, Power Electronics Device

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