10Gbps VCSEL Driver in 0.18μm CMOS Technology

Bing Liang Yu; Ji Chen; Wen Yuan Li

doi:10.4028/www.scientific.net/AMR.760-762.147

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 760-76210Gbps VCSEL Driver in 0.18μm CMOS Technology

10Gbps VCSEL Driver in 0.18μm CMOS Technology

Abstract:

A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.

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Periodical:

Advanced Materials Research (Volumes 760-762)

Pages:

147-151

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.760-762.147

Citation:

Cite this paper

Online since:

September 2013

Authors:

Bing Liang Yu, Ji Chen, Wen Yuan Li

Keywords:

10Gbps, Cascaded, Optical Communications, Shunt Peaking, VCSEL

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