Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

Konstantin O. Petrosyants; Igor A. Kharitonov; Lev M. Sambursky

doi:10.4028/www.scientific.net/AMR.718-720.750

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 718-720Hardware-Software Subsystem for MOSFETs...

Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

Abstract:

Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.

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Periodical:

Advanced Materials Research (Volumes 718-720)

Pages:

750-755

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.718-720.750

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Cite this paper

Online since:

July 2013

Authors:

Konstantin O. Petrosyants, Igor A. Kharitonov, Lev M. Sambursky

Keywords:

Measuring System, MOSFET, Parameter Extraction, Radiation Effects, SPICE Models, Test Structures

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