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Concentration Dependent Physical Properties of SiSn Solid Solution
Abstract:
In the present investigation, we report theoretical study of total energy, energy band gap in X-direction, bulk modulus, elastic constants and pressure derivative of elastic constants of Si1-xSnxsolid solution using higher-order perturbation theory along with application of our proposed potential, where x is concentration of Sn. The parameter of our potential is determined using zero-pressure equilibrium condition. In the present calculations, The local-field correction function can be employed to consider exchange and correlation effects. The present study showed that the physical quantities under investigation varied with the concentration of the constituent element.
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Pages:
150-153
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Online since:
February 2013
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