Radiation Resistance Experiments of Image Sensor and Acoustic Sensor

Article Preview

Abstract:

With the development of the nuclear power and the requirement of the nuclear power equipments’ automation, the fault diagnosis system needs to vibration, noise, temperature and other signals generated by the sensor acquisition system under test. Monitoring technology in high radiation environment is very different from traditional monitoring technology, there is a high radiation resistant performance to sensors, amplifying circuit and transmission cable. The project group preliminary study results show that using sound detection method for real-time video monitoring to get more equipment operating information. According to the research in radiation effect of semiconductor devices and comparison experiment, radiation resistant performance of moving-coil acoustic sensor is above CMOS image sensor several orders of magnitude. This provides a powerful hardware support to it that fault diagnosis method based on capturing the audio signal while the nuclear facilities are operating is proposed.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 591-593)

Pages:

1571-1574

Citation:

Online since:

November 2012

Export:

Price:

[1] L.L. Wang: Space radiation environment on the impact of the CMOS image sensor performance test (MS., Harbin Institute of Technology, China 2009), p.16.

Google Scholar

[2] S.Q. Yang, W.L Zhang, and J. Gong: Functional Materials, Vol. 31 (2000) No.3, p.250. (In Chinese)

Google Scholar

[3] Y.K. Liu, H. Xia, and C.L. Xie: Atomic Energy Science and Technology, Vol. 42 (2008) No.3, p.200. (In Chinese)

Google Scholar

[4] RH Gordon, M. Ali, HS Reno. Radiation Effects on a Radiation-Tolerant CMOS Active Pixel Sensor. (IEEE Trans. On Nuclear Science. 2004). Vol. 51. Page 2753-2762.

DOI: 10.1109/tns.2004.835108

Google Scholar

[5] KF Galloway, PD Schrimpt. MOS Device Degradation Due to Total Dose Ionizing Radiation in the Natural Space Environment: a Review. Micro-electronics J.1990, 21:67-81

DOI: 10.1016/0026-2692(90)90027-z

Google Scholar

[6] Y.P. Zhou, X.M Wang, and G.L. Chang: Infrared and Laser Engineering, Vol. 40 (2011) No.7, p.1271. (In Chinese)

Google Scholar

[7] P.X. Chen: Radiation effects of semiconductor devices and integrated circuits (National Defence Industry Press, China, 2005.)

Google Scholar

[8] X.T. Meng, A.G Kang, and Q. Huang: Atomic Energy Science and Technology, Vol. 38 (2004), p.231. (In Chinese)

Google Scholar

[9] N.Y. Wang: The world's scientific and technological research and development, Vol. 24 (2011) No.6, p.14. (In Chinese)

Google Scholar