A Novel Nano-Scale Multi-Finger MOSFET DC Model Parameters Extraction Method

Zheng Ren; Long Zhang; Shao Jian Hu; Zhou Wei; Yan Ling Shi

doi:10.4028/www.scientific.net/AMR.588-589.699

Paper Titles

Sensor Fault Diagnosis Based on Wavelet Transform in Smart Grid
p.680

A Novel Sensor Less Control of Induction Motor Based on Fuzzy Sliding-Mode Structure
p.684

GAAS Semiconductor Laser Ceramics Finish Measuring Instrument
p.688

Analysis of Circuit Parameters of Eddy Current Sensor
p.692

A Novel Nano-Scale Multi-Finger MOSFET DC Model Parameters Extraction Method
p.699

Adaptive Beam-Forming Based on the Mutative Scale Chaos Optimization
p.703

The Study of Local Wave Noise Reduction Based on the Correlation Analysis
p.707

A Ka-Band Bandpass Filterusing U-Shape Resonators Based on LTCC Technology
p.711

A Parameter Estimation Method for Poly-Phase Coded Signal Based on the Modified Fractional Fourier Transform
p.715

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 588-589A Novel Nano-Scale Multi-Finger MOSFET DC Model...

A Novel Nano-Scale Multi-Finger MOSFET DC Model Parameters Extraction Method

Abstract:

A novel Nano-scale scalable multi-finger RF MOSFET model extraction method is presented in this paper. First, Parasitic resistances induced by measuring probe are analyzed, according to which the extraction method of parasitic probe resistor are proposed. Secondly, it is proved that stress effects on the MOS channel scale with finger number. Moreover, Based on experiment data, it is concluded that several MOS instances, finger numbers, channel width and length highly affect the parasitic source and drain resistance of Multi-finger MOS. An empirical scalable model on them has been suggested. A complete flow of model parameters extraction and optimization on nano-scale multi-finger MOSFET is presented.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 588-589)

Pages:

699-702

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.588-589.699

Citation:

Cite this paper

Online since:

November 2012

Authors:

Zheng Ren, Long Zhang, Shao Jian Hu, Zhou Wei, Yan Ling Shi

Keywords:

Parasitic Probe Resistor, Scalable Multi-Finger MOSFET Model, Stress Effects

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] J. Han and H. Shin, A scalable Model for the substrate resistance in multi-finger RF MOSFETs, Proc. of the IEEE MTT-S Digest, 2003, pp.2105-2108.

DOI: 10.1109/mwsym.2003.1210577

Google Scholar

[2] Waisum Wong, Fang Shao and Andy Huang, etc., Scalable Modeling of MOSFET Source and Drain Resistances for MS/RF Circuit Simulation, IEEE (2006).

DOI: 10.1109/icsict.2006.306104

Google Scholar

[3] G. Gildenblat, H. Wang and T. -L. Chen, etc., SP: An Advanced Surface-Potential-Based MOSFET Model, IEEE J. Solid-State Circuits, vol. 39, no. 9, September 2004, pp.1394-1406.

DOI: 10.1109/jssc.2004.831604

Google Scholar

[4] G. Gildenblat, X. Li and W. Wu, etc., PSP: An advanced surface-potential-based MOSFET model for circuit simulation, IEEE Trans. Electron Dev. vol. 43, no. 9, 2006, p.1979-(1993).

DOI: 10.1109/ted.2005.881006

Google Scholar

[5] B. Parvais, S. Hu and M. Dehan, etc., An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs, IEEE 2007 Custom Intergrated Circuits Conference, pp.503-506.

DOI: 10.1109/cicc.2007.4405781

Google Scholar