Electron Spin Relaxation in Semiconductor Quantum Wells

Yu Wu; Qian Shou

doi:10.4028/www.scientific.net/AMR.424-425.155

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 424-425Electron Spin Relaxation in Semiconductor Quantum...

Electron Spin Relaxation in Semiconductor Quantum Wells

Abstract:

The dependence of electron spin relaxation on the carrier density are investigated based on the D’yakonov-Perel relaxation mechanism. Experimental results obtained by using femtosecond pump-probe technique in AlGaAs/GaAs multiple quantum wells at room temperature show that the spin relaxation time increases from 58 to 82ps at carrier density of 1×1017 to 1×1018cm－3 consistent with the theoretical prediction. This result reveals that with the increment of the carrier density, the spin orbit interaction reduces due to the more frequent momentum scattering and the spin relaxation time prolongs

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Periodical:

Advanced Materials Research (Volumes 424-425)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.424-425.155

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Online since:

January 2012

Authors:

Yu Wu, Qian Shou

Keywords:

Electron Spin Orbit Coupling, Femtosecond Pump-Probe Technique, Spin Relaxation

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