IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

Konstantin O. Petrosyants; Igor A. Kharitonov; Lev M. Sambursky; Maxim V. Kozhukhov

doi:10.4028/www.scientific.net/AMR.1083.185

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1083IV-Characteristics Measurement Error Resulting...

IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

Abstract:

I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper IV-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2-wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.

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Periodical:

Advanced Materials Research (Volume 1083)

Pages:

185-189

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1083.185

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Online since:

January 2015

Authors:

Konstantin O. Petrosyants*, Igor A. Kharitonov, Lev M. Sambursky, Maxim V. Kozhukhov

Keywords:

2-Wire Circuit, 4-Wire Circuit, Bipolar Junction Transistor (BJT), Irradiation, I-V-Characteristics, Long Cables, Measurement Error

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