ZnSe Thin Film Buffer Layer for CIGS Solar Cells Deposited from Chemical Solution with Variety Complexing Agents

Liang Yan Chen; Chao Fang

doi:10.4028/www.scientific.net/AMM.321-324.264

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 321-324ZnSe Thin Film Buffer Layer for CIGS Solar Cells...

ZnSe Thin Film Buffer Layer for CIGS Solar Cells Deposited from Chemical Solution with Variety Complexing Agents

Abstract:

Chemical solution deposited ZnSe thin films can be proper buffer layer of Cu(In,Ga)Se based solar cells in substitution of CdS for environmental consideration, and complexing agents played vital role in chemical solution deposited ZnSe. Ammonia, hydrazine hydrate and triethanolamine have been applied as the complexing agents in chemical solution precursor to get the ZnSe films. Microstructure of the obtained ZnSe films were characterized and the growth property of films with variety complexing agents have been investigated to explorer the state of art in Cu(In,Ga)Se based thin film solar cell fabrication.

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Periodical:

Applied Mechanics and Materials (Volumes 321-324)

Pages:

264-267

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.321-324.264

Citation:

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Online since:

June 2013

Authors:

Liang Yan Chen, Chao Fang

Keywords:

Buffer Layer, Chemical Solution Deposition, Complexing Agents, Solar Cell

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