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KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices

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Abstract:

A non-destructive technique for the characterization of the doped regions inside wide bandgap (WBG) semiconductor structures of power devices is presented. It consists in local measurements of the surface potential by Kelvin Probe Force Microscopy (KPFM) coupled to micro-Raman spectroscopy. The combined experiments allow to visualize the space charge extent of the doped region using the near-field mapping and to estimate its dopant concentration using the Raman spectroscopy. The technique has been successfully applied for the characterization of a WBG SiC (silicon carbide) device.

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Info:

Periodical:

Materials Science Forum (Volume 1062)

Pages:

330-334

DOI:

https://doi.org/10.4028/p-c35702

Citation:

Cite this paper

Online since:

May 2022

Authors:

Nicolas Bercu*, Mihai Lazar, Olivier Simonetti, Pierre Michel Adam, Mélanie Brouillard, Louis Giraudet

Keywords:

AFM, KPFM, Raman Spectroscopy, SiC Device Characterization

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Creative Commons CC BY 4.0

* - Corresponding Author

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