Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices

Mohamed Torky; T. Paul Chow

doi:10.4028/p-18fenn

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HomeMaterials Science ForumMaterials Science Forum Vol. 1062Determination of Effective Critical Breakdown...

Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices

Abstract:

We determine the effective critical breakdown field for 4H-SiC superjunction (SJ) devices and compare it to their conventional counterparts. Also, we investigate its dependence on SJ device structural parameters, such as drift layer thickness (t) and pillar width (W). In 4H-SiC SJ devices, the effective critical breakdown field was found to be around 30% lower than that of conventional devices owing to their longer ionization paths. In particular, the effective critical electric field varies as ξ_cr α t^-1/10 and ξ_cr α t^-1/6 for 4H-SiC SJ and conventional devices respectively but independent of pillar width and doping concentration for high aspect ratio devices (t/W > 10).

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Periodical:

Materials Science Forum (Volume 1062)

Pages:

560-564

DOI:

https://doi.org/10.4028/p-18fenn

Citation:

Cite this paper

Online since:

May 2022

Authors:

Mohamed Torky*, T. Paul Chow

Keywords:

2D Simulation, Effective Critical Breakdown Field, Impact Ionization, Superjunction

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Creative Commons CC BY 4.0

* - Corresponding Author

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