Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

Johannes Reiprich; Thomas Stauden; Theresa Berthold; Marcel Himmerlich; Jörg Pezoldt; Heiko O. Jacobs

doi:10.4028/www.scientific.net/MSF.897.642

Paper Titles

Silicon Carbide Radiation Detectors for Medical Applications
p.626

4H-SiC PIN Diode as High Temperature Multifunction Sensor
p.630

Localized Surface Plasmon on 6H SiC with Ag Nanoparticles
p.634

Chemical Stability of Si-SiC Nanostructures under Physiological Conditions
p.638

Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
p.642

Performance Evaluation and Expected Challenges of Silicon Carbide Power MOSFETs for High Voltage Applications
p.649

Challenges on Drive Circuit Design for Series-Connected SiC Power Transistors
p.655

Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications
p.661

Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET
p.665

HomeMaterials Science ForumMaterials Science Forum Vol. 897Corona Assisted Ga Based Nanowire Growth on...

Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

Abstract:

Gallium oxide nanowires were grown on different substrates using a corona plasma assisted vapor phase epitaxy process and gold catalyst. It is shown that the silicon carbide pseudo substrate in combination with the plasma excitation of the gas phase supports the growth of the gallium oxide nanowires. Analyzing the orientation of the nanowires with respect to the growth surface, it is concluded that the nanowires growth proceed along the fast growth direction of gallium oxide.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

642-645

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.642

Citation:

Cite this paper

Online since:

May 2017

Authors:

Johannes Reiprich, Thomas Stauden, Theresa Berthold, Marcel Himmerlich, Jörg Pezoldt*, Heiko O. Jacobs

Keywords:

Corona, Gallium Oxide, Nanowire, Plasma, Vapor Liquid Solid (VLS), Vapor Phase Epitaxy

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

* - Corresponding Author

References

[1] Y. Liu, Y. Zhang, Q. Yang, S. Niu, Z.L. Wang, Nano Energy, 14 (2015) 257-275.

Google Scholar

[2] S. Kumar, R. Singh, Phys. Status Solidi RRL 7 (2013) 781-792.

Google Scholar

[3] Z.L. Wang, Adv. Mater. 24 (2012) 4632-4646.

Google Scholar

[4] S.I. Stepanov, V.I. Nikolaev, V.E. Bourgrov, A.E. Romanov, Rev. Adv. Mater. Sci. 44 (2016) 63-86.

Google Scholar

[5] K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi, J. Cryst. Growth 378 (2013) 591-595.

DOI: 10.1016/j.jcrysgro.2013.02.015

Google Scholar

[6] S. Barth, F. Hernandez-Ramirez, J.D. Holmes, A. Romano-Rodriguez, Prog. Mater. Sci. 55 (2010) 563-627.

Google Scholar

[7] C.R. Berry, H.O. Jacobs, Nano Lett. 6 (2006) 2790-2796.

Google Scholar

[8] E. -Lin, J.J. Cole, H.O. Jacobs, Nano Lett. 10 (2010) 4494-4500.

Google Scholar

[9] J. Fang, L. Schlag, S. -C. Park, Th. Stauden, J. Pezoldt, P. Schaaf, H.O. Jacobs, Adv. Mater. 28 (2016) 1770-1779.

DOI: 10.1002/adma.201503039

Google Scholar

[10] Ch. Förster, V. Cimalla, O. Ambacher, J. Pezoldt, Mater. Sci. Forum 483-485 (2005) 201-204.

DOI: 10.4028/www.scientific.net/msf.483-485.201

Google Scholar

[11] M. Himmerlich, S. Krischok, V. Lebedev, O. Ambacher, J.A. Schaefer, J. cryst. Growth 306 (2007) 6-11.

Google Scholar

[12] E.G. Villora, K. Shimamura, K. Kitamura, K, Aoki, T. Ujiie, Appl. Phys. Lett. 90 (2007) 234102.

Google Scholar

[13] V.I. Nikolaev, A.I. Pechnikov, V.N. Maslov, A.A. Golovatenko, V.M. Krymov, S.I. Stepanov, N.K. Zhumashev, V.E. Bugrov, A.E. Romanov, Mater. Phys. Mechanics 22 (2015) 59-63. 1 200 nm.

Google Scholar