On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates
p.305
p.305
Basal Plane Dislocations from Inclusions in 4H-SiC Epitaxy
p.309
p.309
Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
p.313
p.313
Polarized Photoluminescence from Partial Dislocations in 4H-SiC
p.319
p.319
Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
p.324
p.324
Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
p.328
p.328
Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
p.332
p.332
Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation
p.338
p.338
Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
p.342
p.342
Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
Abstract:
Basal Plane Dislocations (BPD) were reduced in 4H-SiC epilayers by high temperature annealing in the range of 1600 °C to 1950 °C using two annealing techniques. Samples annealed at > 1750 °C showed almost complete elimination of BPDs propagating from the substrate. However, surface morphology was degraded for MW annealed samples above 1800 °C, with new BPDs being generated from the surface. A new capping technique was developed along with application of high N2 overpressure to preserve the surface morphology and avoid formation of new BPDs.
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Info:
Periodical:
Materials Science Forum (Volumes 778-780)
Pages:
324-327
Citation:
Online since:
February 2014
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