Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning

Hamidreza Zamani; Seung Wan Lee; Amir Avishai; Christian A. Zorman; R. Mohan Sankaran; Philip X.L. Feng

doi:10.4028/www.scientific.net/MSF.717-720.889

Paper Titles

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching
p.873

Novel Cleaning Method of SiC Wafer with Transition Metal Complex
p.877

Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment
p.881

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements
p.885

Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning
p.889

Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF₆/O₂ Plasma Method
p.893

Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
p.897

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
p.901

Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
p.905

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Focused Ion-Beam (FIB) Nanomachining of Silicon...

Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning

Abstract:

We report on experimental explorations of using focused ion beam (FIB) nanomachining of different types of silicon carbide (SiC) thin membranes, for making robust, high-quality stencil masks for new emerging options of nanoscale patterning. Using thin films and membranes in polycrystalline SiC (poly-SiC), 3C-SiC, and amorphous SiC (a-SiC) with thicknesses in the range of t~250nm−1.6μm, we have prototyped a series of stencil masks, with nanoscale features routinely down to ~100nm.

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Silicon Carbide and Related Materials 2011

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

889-892

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.889

Citation:

Cite this paper

Online since:

May 2012

Authors:

Hamidreza Zamani, Seung Wan Lee, Amir Avishai, Christian A. Zorman, R. Mohan Sankaran, Philip X.L. Feng

Keywords:

3C-SiC, Amorphous SiC, Focused Ion Beam (FIB), Membrane, Nanolithography, Nanoscale Patterning, Nanoscale Stencil Mask, Poly-SiC, Silicon Carbide (SiC)

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