Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Sergey A. Reshanov; Svetlana Beljakowa; Bernd Zippelius; Gerhard Pensl; Katsunori Danno; Giovanni Alfieri; Tsunenobu Kimoto; Shinobu Onoda; Takeshi Ohshima; Fei Yan; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.645-648.423

Paper Titles

The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation
p.407

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC
p.411

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
p.415

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
p.419

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
p.427

A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
p.431

Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
p.435

Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
p.439

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Thermal Stability of Defect Centers in n- and...

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Abstract:

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

423-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.423

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Online since:

April 2010

Authors:

Sergey A. Reshanov, Svetlana Beljakowa, Bernd Zippelius, Gerhard Pensl, Katsunori Danno, Giovanni Alfieri, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke

Keywords:

Deep Level Transient Spectroscopy, Electron Irradiation, Low Temperature Photoluminescence

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