Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Paul B. Klein; Rachael L. Myers-Ward; Kok Keong Lew; Brenda L. VanMil; Charles R. Eddy; D. Kurt Gaskill; Amitesh Shrivastava; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.645-648.203

Paper Titles

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
p.183

SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
p.187

Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC
p.193

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
p.199

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
p.203

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
p.207

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.211

Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
p.215

On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
p.219

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Temperature Dependence of the Carrier Lifetime in...

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers

Abstract:

The temperature dependence of the carrier lifetime was measured in n-type 4H-SiC epilayers of varying Z1/2 deep defect concentrations and layer thicknesses in order to investigate the recombination processes controlling the carrier lifetime in low- Z1/2 material. The results indicate that in more recently grown layers with lower deep defect concentrations, surface recombination tends to dominate over carrier capture by other bulk defects. Low-injection lifetime measurements were also found to provide a convenient method to assess the surface band bending and surface trap density in samples with a significant surface recombination rate.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

203-206

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.203

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Online since:

April 2010

Authors:

Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Brenda L. VanMil, Charles R. Eddy, D. Kurt Gaskill, Amitesh Shrivastava, Tangali S. Sudarshan

Keywords:

Carrier Lifetime, Surface Recombination

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References

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