Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Kendrick X. Liu; X. Zhang; Robert E. Stahlbush; Marek Skowronski; Joshua D. Caldwell

doi:10.4028/www.scientific.net/MSF.600-603.345

Paper Titles

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
p.341

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
p.345

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
p.349

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
p.353

Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
p.357

X-Ray Rocking Curve Characterization of SiC Substrates
p.361

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Differences in Emission Spectra of Dislocations in...

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Abstract:

Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photoluminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.