A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC

D.J. Ewing; Qamar-ul Wahab; Sergey P. Tumakha; Leonard J. Brillson; X.Y. Ma; Tangali S. Sudarshan; L.M. Porter

doi:10.4028/www.scientific.net/MSF.527-529.911

Paper Titles

Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC
p.895

Ohmic Contacts on p-Type SiC Using Al/C Films
p.899

Ti/AlNi/W and Ti/Ni₂Si/W Ohmic Contacts to P-Type SiC
p.903

Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes
p.907

A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
p.911

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation
p.915

Diffusion Welding Techniques for Power SiC Schottky Packaging
p.919

Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC
p.923

Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
p.927

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529A Study of Inhomogeneous Schottky Diodes on n-Type...

A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC

Abstract:

In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an epilayer grown by chemical vapor deposition. A majority of the diodes displayed ideal thermionic emission when under forward bias, whereas some diodes showed ‘double-barrier’ characteristics with a ‘knee’ in the low-voltage log I vs. V plot. X-ray topography (XRT) and polarized light microscopy (PLM) revealed no correlations between screw dislocations and micropipes and the presence of double-barrier diodes. Depth resolved cathodoluminescence (DRCLS) indicated that certain deep-level states are associated with the observed electrical variations.

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Materials Science Forum (Volumes 527-529)

Pages:

911-914

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.911

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Online since:

October 2006

Authors:

D.J. Ewing, Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X.Y. Ma, Tangali S. Sudarshan, L.M. Porter

Keywords:

Defect, Depth-Resolved Cathodoluminescence, Inhomogeneity, Polarized Light Microscopy, Schottky Contact, X-Ray Topography

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