Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?

Ze Hong Zhang; Amitesh Shrivastava; Tangali S. Sudarshan

doi:10.4028/www.scientific.net/MSF.527-529.419

Paper Titles

Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
p.403

Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
p.407

Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415

Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
p.419

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
p.423

Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
p.427

Structural Defects and Critical Electric Field in 3C-SiC
p.431

Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy
p.435

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Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?

Abstract:

Dislocations were tracked from 4H-SiC epilayer to the substrate by a new method based on combination of molten KOH etching and Reactive Ion Etching. It was found that basal plane dislocations (BPDs) with dislocation lines parallel (or approximately parallel) to the off-cut direction might propagate as BPDs into the epilayer, while those with dislocation lines forming large angles (>10º) with the off-cut direction will get converted to threading edge dislocations (TEDs). A model is proposed to explain the observations.