Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates

J. Bai; X. Huang; Balaji Raghothamachar; Michael Dudley; B. Wagner; Robert F. Davis; L. Wu; Yimei Zhu

doi:10.4028/www.scientific.net/MSF.527-529.1513

Paper Titles

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates
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Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
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Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates
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Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
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Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
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Anisotropic Properties of GaN Studied by Raman Scattering
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Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
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Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
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Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Strain Relaxation in GaN/AlN Films Grown on...

Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates

Abstract:

Strain relaxation in the GaN/AlN/6H-SiC epitaxial system grown by vicinal surface epitaxy (VSE) is investigated and compared with that in on-axis epitaxy. High resolution x-ray diffraction (HRXRD) measurements show that GaN films grown by VSE have improved crystalline quality. High resolution transmission electron microscope (HRTEM) studies reveal that there are two types of misfit dislocations (MDs) at AlN/6H-SiC interfaces: 60˚ complete dislocations along <1120 > directions with Burgers vector 1/3<1120 > and 60˚ Shockley partials along <10 10 > directions with Burgers vector 1/3<10 10 >. The latter are usually geometrical partial misfit dislocations (GPMDs) that are dominant in VSE to accommodate the lattice mismatch and stacking sequence mismatch simultaneously. In VSE, it is the high-density GPMDs formed at the vicinal surface steps that facilitate rapid strain relaxation at the initial stage of deposition and hence lead to superior crystalline quality of the subsequently grown GaN films.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1513-1516

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1513

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Online since:

October 2006

Authors:

J. Bai, X. Huang, Balaji Raghothamachar, Michael Dudley, B. Wagner, Robert F. Davis, L. Wu, Yimei Zhu

Keywords:

Gallium Nitride (GaN), Strain Relaxation, Vicinal Surface Epitaxy

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References

[1] Jun-ichi Kato, Satoru Tanaka, Satoshi Yamada, and Ikuo Suemune: Appl. Phys. Lett. Vol. 83 (2003), p.1569.

Google Scholar

[2] M. Benyoucef, M. Kuball, D. D. Koleske, A. E. Wickenden, R. L. Henry, M. Fatemi and M. E. Twigg: Mater. Sci. Eng. Vol. B93 (2002), p.15.

Google Scholar

[3] P. A. Grudowski, A. L. Holmes, C. J. Eiting and R. D. Dupuis: Appl. Phys. Lett. Vol. 69 (1996), p.3626.

Google Scholar

[4] P. Vermaut, P. Ruterana, G. Nouet and H. Morkoç: Phil. Mag. A Vol. 75 (1997), p.239.

Google Scholar

[5] J. Bai, X. Huang, M. Dudley, B. Wagner, R. F. Davis, L. Wu, E. Sutter, Y. Zhu, and B. J. Skromme: J. Appl. Phys. Vol. 98 (2005), p.063510.

Google Scholar

[6] P. Pirouz and J. W. Yang: Ultramicroscopy Vol. 51 (1993), p.189.

Google Scholar

[7] P. Pirouz and F. Ernst: Metal-ceramic Interfaces (Pergamon Press, Oxford 1990), pp.199-221.

Google Scholar

[8] B. Moran, F. Wu, A. E. Romanov, U. K. Mishra, S. P. Denbaars, and J. S. Speck: J. Cryst. Growth Vol. 273 (2004), p.38.

Google Scholar

[9] X. R. Huang, J. Bai, M. Dudley, B. Wagner, R. F. Davis, and Y. Zhu: Phys. Rev. Lett. Vol. 95 (2005), p.086101.

Google Scholar