Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)

Carey M. Tanner; Jun Lu; Hans Olof Blom; Jane P. Chang

doi:10.4028/www.scientific.net/MSF.527-529.1075

Paper Titles

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta₂Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
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Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
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High Temperature Annealing Study of Al₂O₃ Deposited by ALCVD on n-Type 4H-SiC
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Experimental and First-Principles Studies of the Band Alignment at the HfO₂/4H-SiC (0001) Interface
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Structural and Morphological Properties of Ultrathin HfO₂ Dielectrics on 4H-SiC (0001)
p.1075

Low Temperature Deposition of HfO₂ Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition
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Electrical Properties of the La₂O₃/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)₃ and H₂O
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Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
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Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide
p.1091

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Structural and Morphological Properties of...

Structural and Morphological Properties of Ultrathin HfO₂ Dielectrics on 4H-SiC (0001)

Abstract:

The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power metal-oxide-semiconductor field effect transistors. Stoichiometric HfO2 films were deposited on n-type 4H-SiC (0001) by atomic layer deposition (ALD) at substrate temperatures of 250-450°C. No significant interfacial layer formation was observed by in-situ X-ray photoelectron spectroscopy (XPS) and an abrupt interface was confirmed by high-resolution transmission electron microscopy (HRTEM). A temperature-dependent transition from amorphous layer-by-layer growth to crystalline three-dimensional island growth was identified by in-situ reflection high-energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). X-ray diffraction (XRD) confirmed the presence of monoclinic HfO2 domains in crystallized films.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1075-1078

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1075

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Online since:

October 2006

Authors:

Carey M. Tanner, Jun Lu, Hans Olof Blom, Jane P. Chang

Keywords:

Atomic Force Microscope (AFM), Atomic Layer Deposition (ALD), HfO₂/4H-Sic Interface, High Resolution Transmission Electron Microscopy, High-k Dielectrics, Morpholoy, RHEED, Structure, Surface Preparation, X-Ray Diffraction (XRD), X-Ray Photoelectron Spectroscopy (XPS)

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