Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

Mitsutaka Nakamura; Toshiyuki Isshiki; Taro Nishiguchi; Koji Nishio; Satoru Ohshima; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.483-485.181

Paper Titles

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
p.163

Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
p.169

Growth of 3C-(Si_1-xC_1-y)Ge_x+y Layers on 4H-SiC by Molecular Beam Epitaxy
p.173

Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
p.177

Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
p.181

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
p.185

Planar Defects, Voids and their Relationship in 3C-SiC Layers
p.189

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
p.193

Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
p.197

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Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

Abstract:

Hetero-epitaxial CVD growth of 3C-SiC on a Si(110) substrate gives a (111) crystal with low defects density. However, double positioning growth often disturbs growth of a single crystal. The growth on an off-axis Si(110) substrate suppressed propagation of the double positioning defects in the grown layer effectively. Cross-sectional transmission electron microscopy revealed the details of the suppression process on the off-axis substrate. The suppression mechanism and the origin of the defects formation at double positioning boundaries were interpreted by the growth model based on an anisotropic growth rate on (111) plane of 3C-SiC.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.181

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Online since:

May 2005

Authors:

Mitsutaka Nakamura, Toshiyuki Isshiki, Taro Nishiguchi, Koji Nishio, Satoru Ohshima, Shigehiro Nishino

Keywords:

3C-SiC, Double Positioning Growth, Hetero-Epitaxial CVD, High Resolution Transmission Electron Microscopy

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References

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