TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C
p.343
p.343
TEM Studies on the Initial Stage of Seeded Solution Growth of 6H-SiC using Metal Solvent
p.347
p.347
Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process
p.351
p.351
Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy
p.355
p.355
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
p.359
p.359
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
p.363
p.363
Structural Transformation of Dislocated Micropipes in Silicon Carbide
p.367
p.367
Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
p.371
p.371
Inelastic Stress Relaxation in Single Crystal SiC Substrates
p.375
p.375
TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
359-362
Citation:
Online since:
June 2004
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