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HomeMaterials Science ForumMaterials Science Forum Vols. 457-460Structural Analysis of (211) 3C-SiC on (211) Si...

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition

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Silicon Carbide and Related Materials 2003

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

285-288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.285

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Online since:

June 2004

Authors:

Taro Nishiguchi, Yoshihiko Mukai, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

Keywords:

(211), 3C-SiC, Orientation, Si Substrate, Stacking Fault, TEM

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