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HomeMaterials Science ForumMaterials Science Forum Vols. 433-4361kV 4H-SiC JBS Rectifiers Fabricated Using an AlN...

1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

843-846

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.843

Citation:

Cite this paper

Online since:

September 2003

Authors:

Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R.D. Vispute, T. Venkatesan, Anant K. Agarwal

Keywords:

4H-SiC, Aluminum Nitride (AlN), Anneal, Junction Barrier Schottky (JBS) Diode, Schottky Rectifier

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[1] F. Dahlquist, and H. Lendenmann, Materials Science Forum, Vols. 338-342 (2000), p.1179.

[2] K. Asano, and Y. Sugawara, ISPSD, Toulouse, France, May, (2000).

[3] R. Singh, S-H. Ryu, and J.W. Palmour, ISPSD, Toulouse, France, May, (2000).

[4] K.A. Jones, P.B. Shah, K.W. Kirchner, R.T. Lareau, M.C. Wood, M.H. Ervin, R.D. Vispute, R.P. Sharma, T. Venkatesan, and O.W. Holland, Mater. Sci. Eng. B61-62, (1999).

DOI: 10.1016/s0921-5107(98)00518-2