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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Enhanced Dopant Diffusion Effects in 4H Silicon...

Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

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Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

855-858

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.855

Citation:

Cite this paper

Online since:

April 2002

Authors:

G.J. Phelps, Nicolas G. Wright, E.G. Chester, C. Mark Johnson, Anthony G. O'Neill, S. Ortolland, Alton B. Horsfall, Konstantin Vassilevski, Russell Gwilliam

Keywords:

Enhanced Diffusion, Field-Enhanced Diffusion, Nitrogen Diffusion

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