Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures
p.751
p.751
Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface Micromachining
p.755
p.755
Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon Carbide
p.759
p.759
Thermoelectric Properties of 3C-SiC Produced by Silicon Carbonization
p.763
p.763
The Brittle-to-Ductile Transition in 4H-SiC
p.767
p.767
Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
p.773
p.773
Range Distributions of Implanted Ions in Silicon Carbide
p.779
p.779
Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
p.783
p.783
Electrical Activation of Implanted Phosphorus Ions in (0001)/(11-20)-Oriented 4H-SiC
p.787
p.787
The Brittle-to-Ductile Transition in 4H-SiC
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
767-772
Citation:
Online since:
April 2002
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