Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiC
p.573
p.573
Theoretical Studies of Vanadium Impurity in β-SiC
p.577
p.577
New and Improved Quantitative Characterization of SiC Using SIMS
p.581
p.581
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiC
p.585
p.585
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
p.589
p.589
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
p.593
p.593
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation
p.597
p.597
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC
p.601
p.601
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-Temperature
p.605
p.605
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
589-592
Citation:
Online since:
April 2002
Keywords:
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