High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials
p.501
p.501
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
p.505
p.505
Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation
p.509
p.509
Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals
p.513
p.513
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
p.517
p.517
Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface
p.521
p.521
Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
p.525
p.525
Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System
p.529
p.529
Illusion of New Polytypes
p.533
p.533
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
517-520
Citation:
Online since:
May 2000
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