Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal
p.449
p.449
Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
p.453
p.453
In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography
p.457
p.457
X-ray Topographic Study of SiC Crystal at High Temperature
p.461
p.461
Synchrotron White Beam Topography Studies of 2H SiC Crystals
p.465
p.465
Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
p.469
p.469
X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
p.473
p.473
Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT
p.477
p.477
Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching
p.481
p.481
Synchrotron White Beam Topography Studies of 2H SiC Crystals
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
465-468
Citation:
Online since:
May 2000
Keywords:
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