Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
p.103
p.103
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
p.107
p.107
Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
p.111
p.111
Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
p.115
p.115
Boron Compensation of 6H Silicon Carbide
p.119
p.119
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
p.123
p.123
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
p.127
p.127
Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
p.131
p.131
Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
p.135
p.135
Boron Compensation of 6H Silicon Carbide
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
119-122
Citation:
Online since:
February 1998
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