Surface Recombination in Semiconductors
p.1389
p.1389
Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs
p.1395
p.1395
Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
p.1401
p.1401
Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
p.1407
p.1407
Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
p.1413
p.1413
PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe 77Br(77Se)
p.1419
p.1419
Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
p.1425
p.1425
Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal
p.1431
p.1431
Optically Induced Anneal of GaAs and AlGaAs Layers
p.1437
p.1437
Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 196-201)
Pages:
1413-1418
Citation:
Online since:
November 1995
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