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The PiezoElectronic Switch: A Path to High Speed, Low Energy Electronics

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Abstract:

In contrast to the Moore’s Law exponential growth in CMOS transistor areal density, computer clock speeds have been frozen since 2003 due to excessive power dissipation. We present the development of a new digital switch, the PiezoElectronic Transistor (PET), designed to circumvent the speed and power limitations of the CMOS transistor. The PET operates on a novel principle: an electrical input is transduced into an acoustic pulse by a piezoelectric (PE) actuator, which, in turn, drives a continuous insulator-to-metal transition in a piezoresistive (PR) channel, thus switching on the device. Predictions of theory and simulation, assuming bulk materials properties can be approximately retained at scale, are that PETs can operate at one-tenth the present voltage of CMOS technology and 100 times less power, while running at multi-GHz clock speeds. CMOS-like computer architectures, such as a simulated adder, can be fully implemented. Materials development for PE and PR thin films approaching the properties of bulk single crystals, and a successful fabrication scheme, are the key to realizing this agenda. We describe progress in developing PE films (where d33 is critical) and PR films (characterized by conductance and ON/OFF ratio) of demonstration quality. A macroscopic-scale PET has been built to demonstrate PET viability over large numbers of switching cycles. The perspective for the development of pressure-driven electronics will be outlined.

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Periodical:

Advances in Science and Technology (Volume 90)

Pages:

93-102

DOI:

https://doi.org/10.4028/www.scientific.net/AST.90.93

Citation:

Cite this paper

Online since:

October 2014

Authors:

Dennis M. Newns*, Glenn J. Martyna, Bruce G. Elmegreen, Matt Copel, Marcelo A. Kuroda, Paul M. Solomon, Thomas M. Shaw, Alejandro G. Schrott, Xiao Hu Liu, Susan Trolier-McKinstry

Keywords:

Metal-Insulator, Mixed Valence, Piezoelectric, Switch, Transduction

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* - Corresponding Author

References

[1] T.N. Theis, P. M Solomon, In Quest of the Next Switch,: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field Effect Transistor, Proc. IEEE, 87 (2010) 2005-(2014).

DOI: 10.1109/jproc.2010.2066531

Google Scholar

[2] T.N. Theis, In Quest of a Fast, Low-Voltage Digital Switch, ECS Trans., 45 (2012) 3-11.

DOI: 10.1149/1.3700933

Google Scholar

[3] W. Haensch, et al., Silicon CMOS devices beyond scaling, IBM J. Res. Dev., 50 (2006) 339-358.

Google Scholar

[4] H. Iwai, Roadmap for 22 nm and beyond, Microelectronic Engineering 86 (2009) 1520-1528.

Google Scholar

[5] A.C. Seabaugh, Low-Voltage Tunnel Transistors for Beyond CMOS Logic, Proc. IEEE 98 (2010) 2095-2110.

DOI: 10.1109/jproc.2010.2070470

Google Scholar

[6] X.L. Feng, M.H. Matheny, C.A. Zorman, M. Mehregany, M.L. Roukes, Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires, Nano Lett. 10 (2010) 2891–2896.

DOI: 10.1021/nl1009734

Google Scholar

[7] K. Akarvardar, H. -S. Wong, Nanoelectromechanical Logic and Memory Devices, ECS Trans. 19 (2009) 49-59.

DOI: 10.1149/1.3118930

Google Scholar

[8] T. -J. K. Liu, E. Alon, V. Stojanovic, D. Markovic, The Relay Reborn, IEEE Spectrum, April (2012).

Google Scholar

[9] D. Newns, B. Elmegreen, X-H. Liu, G. Martyna, A low-voltage high-speed electronic switch based on piezoelectric transduction, J. Appl. Phys., 111 (2012) 084509-18.

DOI: 10.1063/1.4704391

Google Scholar

[10] D.M. Newns, B.G. Elmegreen, X-H. Liu, G.J. Martyna, The Piezoelectronic Transistor: A Nanoactuator-Based Post-CMOS Digital Switch With High Speed And Low Power, MRS Bulletin, 37 (2012) 1071-1076.

DOI: 10.1557/mrs.2012.267

Google Scholar

[11] D.M. Newns, B.G. Elmegreen, X-H. Liu, G.J. Martyna, High Response Piezoelectric and Piezoresistive Materials for Fast, Low Voltage Switching: Simulation and Theory of Transduction Physics at the Nanometer-Scale, Adv. Mat., 24 (2012) 3672-3677.

DOI: 10.1002/adma.201104617

Google Scholar

[12] Shujun Zhang and Fei Li, High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective, Journal of Applied Physics 111, 031301 (2012).

DOI: 10.1063/1.3679521

Google Scholar

[13] Huaxiang Fu & Ronald E. Cohen, Polarization rotation mechanism for ultrahigh electromechanical response in single-crystal piezoelectrics, Nature 403, 201 (2000).

DOI: 10.1038/35002022

Google Scholar

[14] V.A. Shuvaeva, A.M. Glazer and D. Zekria, The macroscopic symmetry of Pb(Mg1/3Nb2/3)1−xTixO3 in the morphotropic phase boundary region (x = 0. 25–0. 5), J. Phys.: Condens. Matter 17 (2005) 5709–5723.

DOI: 10.1088/0953-8984/17/37/009

Google Scholar

[15] M. Iwata, H. Orihara, Y. Ishibashi, Anisotropy of Piezoelectricity near Morphotropic Phase Boundary in Perovskite-Type Oxide Ferroelectrics, Ferroelectrics 266 (2002) 57-71.

DOI: 10.1080/714939482

Google Scholar

[16] D.B. Mc Whan, J.B. Remelka, Metal-insulator transition in metaloxides, Phys. Rev. B 2 (1970) 3734-3750.

Google Scholar

[17] A. Jayaraman, A.K. Singh, A. Chatterjee, and S.U. Devi, Pressure-volume relationship and pressure-induced electronic and structural transformations in Eu and Yb monochalcogenides, Phys. Rev. B 9 (1974) 2513-2520.

DOI: 10.1103/physrevb.9.2513

Google Scholar

[18] Z. Jiang, M.A. Kuroda, Y. Tan, D.M. Newns, M. Povolotskyi, T.B. Boykin, T. Kubis, , G. Klimeck, G.J. Martyna, Electron transport in nano-scaled piezoelectronic devices, Appl. Phys. Lett. 102 (2013) 193501-193507.

DOI: 10.1063/1.4804601

Google Scholar

[19] D.C. Gupta and S. Kulshrestha, Pressure induced magnetic, electronic and mechanical properties of SmX (X=Se, Te), J. Phys.: Condens. Matter 21 (2009) 436011-436021.

DOI: 10.1088/0953-8984/21/43/436011

Google Scholar

[20] M. Copel, et al., Giant Piezoresistive On/Off Ratios in Rare-Earth Chalcogenide Thin Films Enabling Nanomechanical Switching, Nano Lett. 13, (2013) 4650–4653.

DOI: 10.1021/nl401710f

Google Scholar

[21] J. H. Park, F. Xu, S. Trolier-McKinstry, Dielectric and piezoelectric properties of sol–gel derived lead magnesium niobium titanate films with different textures, Journal of Applied Physics, 89 (2001) 568-574.

DOI: 10.1063/1.1324685

Google Scholar

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