Fabrication and Characteristic Investigation of Multifunctional Oxide p-n Heterojunctions

Hui Bin Lu; K.J. Jin; Kun Zhao; Y.H. Huang; Meng He; Zhi Hui Chen; Y.L. Zhou; G.Z. Yang

doi:10.4028/www.scientific.net/AST.45.2582

Paper Titles

Complex Permeability of Ferrites Correlated with their Microstructure
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Magnetoresistance Effect of La_0.8Bi_0.2MnO₃/MgO/Co Heterojunction Device
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Synthesis and Electromagnetic Properties of Ca₂MTeO₆ (M = Mn, Co, Mg)
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Development of a Super Broadband RF Splitter Using Bead Type Ferrite Core Transformers
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Fabrication and Characteristic Investigation of Multifunctional Oxide p-n Heterojunctions
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Magnetophotonic Crystals: Now and Future
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Hybrid Ordered Hole-Random Hole Optical Fibers
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Comparative Optical Characterization of Transparent Nd-Doped YAG Ceramics and Single Crystals for Laser Applications
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Vanadium Doped Antimony-Tin Oxide Nano-Sols and their Films Produced by a Sol-Coating Method
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Fabrication and Characteristic Investigation of...

Fabrication and Characteristic Investigation of Multifunctional Oxide p-n Heterojunctions

Abstract:

A series of all-perovskite oxide p-n heterojunctions (PNHs) as well as perovskite oxide and Si PNHs have been fabricated by a laser molecular-beam epitaxy. The good nonlinear and rectifying I-V characteristics in the PNHs, unusual and high sensitivity of positive magnetoresistance in low magnetic field in SrNbxTi1-xO3/La1-ySryMnO3 and La1-xSrxMnO3/Si PNHs, ps orders ultrafast photoelectric effect in La1-xSrxMnO3/Si PNHs, as well as ferroelectric property due to the interface enhancement in BaNb0.3Ti0.7O3/Si PNHs have been observed. It is expected that the further investigation on the PNHs could not only stimulate theoretical study on the mechanisms but also would open up new possibilities in the development and application of electrical devices.

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Periodical:

Advances in Science and Technology (Volume 45)

Pages:

2582-2587

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2582

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Online since:

October 2006

Authors:

Hui Bin Lu, K.J. Jin, Kun Zhao, Y.H. Huang, Meng He, Zhi Hui Chen, Y.L. Zhou, G.Z. Yang

Keywords:

Characteristic Investigation, Fabrication, Perovskite Oxide, p-n Heterojunction

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References

[1] H. Tanaka, J. Zhang and T. Kawai: Phys. Rev. Lett. Vol. 88 (2002), p.027204.

Google Scholar

[2] C. Mitra, P. Paychaudhuri, K. Dorr, L. Schultz, P. M. Oppeneer and S. Wirth: Phys. Rev. Lett., Vol. 90 (2003), p.017202.

Google Scholar

[3] J. R. Sun, C. M. Xiong, B. G. Shen, P. Y. Wang and Y. X. Weng: Appl. Phys. Lett. Vol. 84 (2004), p.2611.

Google Scholar

[4] K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, S. Bradshaw and C. D. Overgaard: Appl. Phys. Lett. Vol. 76 (2000), p.1324.

DOI: 10.1063/1.126023

Google Scholar

[5] R. A. Mckee, F. J. Walker, M. F. Chisholm: Phys. Rev. Lett. Vol. 81 (1998), p.3014; Science, 2001, 293, 468.

Google Scholar

[6] H. N. Lee, D. Hesse, N. Zakharov and U. Gosele: Science Vol. 296 (2002), p. (2006).

Google Scholar

[7] H. B. Lu, G. Z. Yang, Z. H. Chen, S.Y. Dai, Y. L. Zhou, K. J. Jin, B. L. Cheng, M. He, L. F. Liu, H. Z. Guo, Y. Y. Fei, W. F. Xiang and L. Yan: Appl. Phys. Lett. Vol. 84 (2004).

Google Scholar

[8] H. B. Lu, K. J. Jin, Y. H. Huang, M. He, K. Zhao, B. L. Cheng, Z. H. Chen, Y. L. Zhou, S. Y. Dai and G. Z. Yang: Appl. Phys. Lett. Vol. 86 (2005).

Google Scholar

[9] G. Z. Yang, H. B. Lu, F. Chen, T. Zhao and Z. H. Chen: J. Crystal Growth Vol. 227-228 (2001), p.929.

Google Scholar

[10] H. B. Lu, S. Y. Dai and F. Chen: Ferroelectrics Vol. 271 (2002)，p.125.

Google Scholar

[11] H. Z. Guo, Y. H. Huang, K. J. Jin, Q. L. Zhou, H. B. Lu, L. F. Liu, Y. L. Zhou, B. L. Cheng, Z. H. Chen: Appl. Phys. Lett. Vol. 86 (2005), p.123502.

Google Scholar

[12] P. X. Zhang, W. K. Lee and G. Y. Zhang: Appl. Phys. Lett. Vol. 81 (2002), p.4026.

Google Scholar

[13] Y. H. Huang, K. Zhao, H. B. Lu, K. J. Jin, Z. H. Chen, Y. L. Zhou and G. Z. Yang: Appl. Phys. Lett. Vol. 88 (2006), p.061919.

Google Scholar

[14] Y. H. Huang, K. Zhao, K. J. Jin, H. B. Lu, M. He, Z. H. Chen, Y. L. Zhou, G. Z. Yang: Physica B Vol. 373 (2006), p.313.

Google Scholar