Abstract
An enhanced high-temperature electrical resistivity of AlN at high voltage was obtained by using MgO doping to modulate the Schottky barrier. Doped MgO was precipitated in an ∼100-nm-thick layer near grain boundaries, which reduced not only anionic carriers, but also the carrier mobility, due to the formation of defects (Mg′Al, O·N). According to an impedance analysis, the activation energy and the resistivity due to grain boundaries were increased by MgO doping, suggesting an elevated Schottky barrier. As a result, a remarkable high-voltage electrical resistivity, which is greater than 1010 Ω·cm at 550 °C/100 V, can be achieved, which is valuable for electrostatic chucking devices.
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This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (2018M3D1A1058793) and by the Ministry of Trade, Industry, and Energy (10053585).
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Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries
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Lee, E., Pee, JH., Lee, SM. et al. Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries. J. Korean Phys. Soc. 77, 673–679 (2020). https://doi.org/10.3938/jkps.77.673
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DOI: https://doi.org/10.3938/jkps.77.673