Abstract
The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiN x :H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiN x :H thin films were deposited by varying the gas ratio R (=NH3/SiH4+NH3) and were annealed by rapid thermal processing (RTP). Metal-insulator-semiconductor (MIS) devices were fabricated using SiN x :H thin films as insulator layers and they were analyzed in the temperature range of 100–400 K by using capacitance-voltage (C-V) and current-voltage (I–V) measurements. The annealed SiN x :H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm × 156 mm) crystalline-silicon solar cells.
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Yoo, JS., Cho, JS., Park, JH. et al. Electrical characterization of MIS devices using PECVD SiN x :H films for application of silicon solar cells. Journal of the Korean Physical Society 61, 89–92 (2012). https://doi.org/10.3938/jkps.61.89
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DOI: https://doi.org/10.3938/jkps.61.89