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Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode

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Abstract

By incorporating a 966-nm pump laser diode, we realized bidirectional laser triggering in a twoterminal planar device based on a highly-resistive vanadium-dioxide (VO2) thin film grown by using the pulsed laser deposition method. Bidirectional laser triggering of up to 10 mA was achieved by directly illuminating the VO2 film with a focused infrared laser beam, and the transient responses of the laser-triggered currents were analyzed. A switching contrast between the off-state and the on-state currents was measured as ∼3571, and the rising and the falling times were measured as ∼40 and ∼20 ms, respectively, when laser pulses with a pulse width of 100 ms excited the VO2-based device.

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Authors and Affiliations

  1. School of Electrical Engineering, Pukyong National University, Busan, 48513, Korea

    Jihoon Kim

  2. Mobrik Co. Ltd., Daejeon, 34129, Korea

    Bong-Jun Kim

  3. Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Korea

    Bong-Ahn Yu

  4. Department of Biomedical Engineering, Pukyong National University, Busan, 48513, Korea

    Hyun Wook Kang, Seung Yun Nam & Junghwan Oh

  5. Interdisciplinary Program of Biomedical Mechanical & Electrical Engineering, Pukyong National University, Busan, 48513, Korea

    Hyun Wook Kang, Seung Yun Nam & Junghwan Oh

  6. School of Electrical Engineering, Pukyong National University, Busan, 48513, Korea

    Yong Wook Lee

  7. Interdisciplinary Program of Biomedical Mechanical & Electrical Engineering, Pukyong National University, Busan, 48513, Korea

    Yong Wook Lee

Authors
  1. Jihoon Kim
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  2. Bong-Jun Kim
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  3. Bong-Ahn Yu
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  4. Hyun Wook Kang
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  5. Seung Yun Nam
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  6. Junghwan Oh
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  7. Yong Wook Lee
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Correspondence to Yong Wook Lee.

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Kim, J., Kim, BJ., Yu, BA. et al. Bidirectional laser triggering in highly-resistive vanadium-dioxide thin films by using a 966-nm pump laser diode. Journal of the Korean Physical Society 68, 323–328 (2016). https://doi.org/10.3938/jkps.68.323

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  • DOI: https://doi.org/10.3938/jkps.68.323

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