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Electron Paramagnetic Resonance Study of Al-incorporated ZnO:Mn Diluted Magnetic Semiconductors

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Abstract

We have employed electron paramagnetic resonance spectroscopy and magnetization measurements in order to study the effect of Al-incorporation on the magnetic interactions in ZnO:Mn diluted magnetic semiconductors. Al-doping is shown to decrease the antiferromagnetic correlation and to increase the ferromagnetic interaction, which is attributed to the hydrogen-mediated ferromagnetic Mn complexes in our Mn-doped ZnO samples.

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Authors and Affiliations

  1. Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute, Gyeongju, 38180, Korea

    Jun Kue Park

  2. Department of Physics, Korea University, Seoul, 02841, Korea

    K. W. Lee, D. M. Choi & Cheol Eui Lee

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  1. Jun Kue Park
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  2. K. W. Lee
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  3. D. M. Choi
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  4. Cheol Eui Lee
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Correspondence to Cheol Eui Lee.

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Park, J.K., Lee, K.W., Choi, D.M. et al. Electron Paramagnetic Resonance Study of Al-incorporated ZnO:Mn Diluted Magnetic Semiconductors. J. Korean Phys. Soc. 73, 1884–1888 (2018). https://doi.org/10.3938/jkps.73.1884

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  • DOI: https://doi.org/10.3938/jkps.73.1884

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