Abstract
This paper reports the high-temperature-dependent electrical behavior of a 2D multilayer MoS2 transistor. The existence of a big Schottky barrier at the MoS2-Ti junction can reduce carrier transport and lead to a lower transistor conductance. At a high temperature (380 K), the fieldeffect mobility of the multilayer MoS2 transistor increases to 16.9 cm2V−1sec−1, which is 2 times higher than the value at room temperature. These results demonstrate that at high temperature, carrier transport in a MoS2 with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier.
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Lee, Y., Park, H., Kwon, J. et al. High-temperature electrical behavior of a 2D multilayered MoS2 transistor. Journal of the Korean Physical Society 64, 945–948 (2014). https://doi.org/10.3938/jkps.64.945
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DOI: https://doi.org/10.3938/jkps.64.945