Araştırma Makalesi
Yıl 2019,
Cilt: 19 Sayı: 1, 54 - 59, 28.05.2019
Öz
Kaynakça
- Achour, H., Louhibi-Fasla, S. and Mana, F., 2014. Theoretical investigation of GaN. Physics Procedia, 55, 17-23.
- Brewer, A. K., 1928. The Electrodynamics of Surface Catalysis. The Journal of Physical Chemistry, 32(7), 1006-1017.
- Chen, L., Detchprohm, T., Wetzel, C., Wang, G.-C. and Lu, T.-M., 2014. Photoluminescence of GaInN/GaN multiple quantum well heterostructures on amorphous surface through biaxial metal buffer layers. Nano Energy, 5, 1-8.
- Cheng, Y.-W., Wu, H.-Y., Lin, Y.-Z., Lee, C.-C. and Lin, C.-F., 2015. Post-annealing effects on pulsed laser deposition-grown GaN thin films. Thin Solid Films, 577, 17-25. Dinca-Balan, V., Vladoiu, R., Mandes, A. and Prodan, G., 2017. Correlation study of nanocrystalline carbon doped thin films prepared by a thermionic vacuum arc deposition technique. Journal of Physics D: Applied Physics, 50(43), 435305.
- Fujiwara, A., Ishizaki, S., Nakane, S., Murakami, Y. and Sato, Y., 2016. Variations in photoluminescence properties of GaN-based thin films directly grown on an amorphous quartz glass substrate. Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 1-2, 2016.
- Gundogdu, T., Gökkavas, M. and Ozbay, E., 2014. Improving the efficiency enhancement of photonic crystal based InGan solar cell by using a GaN cap layer. Advances in Materials Science and Engineering, 2014.
- Jabri, S., Amiri, G., Sallet, V., Souissi, A., Meftah, A., Galtier, P. and Oueslati, M., 2016. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses. Physica B: Condensed Matter, 489, 93-98.
- Jepu, I., Porosnicu, C., Lungu, C., Mustata, I., Luculescu, C., Kuncser, V. and Ciupina, V., 2014. Combinatorial Fe–Co thin film magnetic structures obtained by thermionic vacuum arc method. Surface and Coatings Technology, 240, 344-352.
- Kaplan, H., Sarsıcı, S., Akay, S. and Ahmetoglu, M., 2017. The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc. Journal of Alloys and Compounds, 724, 543-548.
- Kazazis, S., Papadomanolaki, E., Androulidaki, M., Tsagaraki, K., Kostopoulos, A., Aperathitis, E. and Iliopoulos, E., 2016. Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates. Thin Solid Films, 611, 46-51.
- Mori, T., Egawa, T. and Miyoshi, M., 2017. Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells. Materials Research Express, 4(8), 085904.
- Naz, S., Nawaz, H., Arshad, U., Ansari, F. and Shahzadi, R., 2017. Biogenic Synthesis of Silver Nanoparticles and Valuation of their Antimicrobial Activity against Dengue Larvae. J Plant Pathol Microbiol, 8(418), 2.
- Oliva, R., Segura, A., Ibáñez, J., Yamaguchi, T., Nanishi, Y. and Artús, L., 2014. Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride. Applied Physics Letters, 105(23), 232111.
- Özen, S., Şenay, V., Pat, S. and Korkmaz, Ş., 2016a. Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates. Materials Research Express, 3(4), 045012.
- Özen, S., Şenay, V., Pat, S. and Korkmaz, Ş., 2016b. Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries. Journal of Physics D: Applied Physics, 49(10), 105303.
- Park, J.-Y., Song, K. M., Min, Y.-S., Choi, C.-J., Kim, Y. S. and Lee, S.-N., 2015. Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes. Scientific reports, 5.
- Richardson, O., 1909. LXXVII. Thermionics. The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 17(102), 813-833.
- Schaake, C. A., Brown, D. F., Swenson, B. L., Keller, S., Speck, J. S. and Mishra, U. K., 2013. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency. Semiconductor Science and Technology, 28(10), 105021.
- Shen, K.-C., Wang, T.-Y., Wuu, D.-S. and Horng, R.-H., 2012. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target. Optics express, 20(14), 15149-15156.
- Sukserm, A., Pinsook, U. and Pluengphon, P., 2017. Structural phase transitions of Ga (Mn) N under high pressure. Journal of Physics: Conference Series, IOP Publishing, 012030.
- Yao, Y. and Klug, D. D., 2013. B 4− B 1 phase transition of GaN under isotropic and uniaxial compression. Physical Review B, 88(1), 014113.
- Yi, Z., Jin-Cheng, Z., Jun-Shuai, X., Xiao-Wei, Z., Sheng-Rui, X. and Yue, H., 2015. Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys. Chinese Physics B, 24(1), 017302.
Yıl 2019,
Cilt: 19 Sayı: 1, 54 - 59, 28.05.2019
Öz
Bu çalışmada, amorf cam
alttaşlar üzerine InGaN ince filmler hızlı ve düşük maliyetli olan termiyonik
vakum ark yöntemi ile doğrudan üretilmiştir. İnce filmler tek bir deneyde
alttaş ısıtma uygulamadan 2 farklı anot-alttaş arası mesafede biriktirilmiştir.
Üretilen InGaN ince filmlerin yapısal ve yüzeysel özellikleri uygun analiz
yöntemleri ile belirlenmiştir. X-ışını kırınım (XRD) cihazı ile XRD desenleri
belirlenerek kristal boyutları Scherrer yöntemi tarafından hesaplanmıştır.
Hekzagonal wurtzite kristal yapılı %50 In katkılı GaN filmlerin üretildiği
belirlenmiştir. InGaN ince filmlerin yüzeysel özellikleri ise atomik kuvvet
mikroskobu aracılığıyla tespit edilmiştir. Yüzey özellikleri belirlenirken
histogram analizleri ve boyut analizleri yapılmıştır. GaN temelli cihazların
üretiminde termiyonik vakum ark yönteminin alternatif üretim sistemi olduğu
görülmüştür.
Anahtar Kelimeler
InGaN Termiyonik vakum ark Yapısal özellikler Yüzey özellikleri
Kaynakça
- Achour, H., Louhibi-Fasla, S. and Mana, F., 2014. Theoretical investigation of GaN. Physics Procedia, 55, 17-23.
- Brewer, A. K., 1928. The Electrodynamics of Surface Catalysis. The Journal of Physical Chemistry, 32(7), 1006-1017.
- Chen, L., Detchprohm, T., Wetzel, C., Wang, G.-C. and Lu, T.-M., 2014. Photoluminescence of GaInN/GaN multiple quantum well heterostructures on amorphous surface through biaxial metal buffer layers. Nano Energy, 5, 1-8.
- Cheng, Y.-W., Wu, H.-Y., Lin, Y.-Z., Lee, C.-C. and Lin, C.-F., 2015. Post-annealing effects on pulsed laser deposition-grown GaN thin films. Thin Solid Films, 577, 17-25. Dinca-Balan, V., Vladoiu, R., Mandes, A. and Prodan, G., 2017. Correlation study of nanocrystalline carbon doped thin films prepared by a thermionic vacuum arc deposition technique. Journal of Physics D: Applied Physics, 50(43), 435305.
- Fujiwara, A., Ishizaki, S., Nakane, S., Murakami, Y. and Sato, Y., 2016. Variations in photoluminescence properties of GaN-based thin films directly grown on an amorphous quartz glass substrate. Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 1-2, 2016.
- Gundogdu, T., Gökkavas, M. and Ozbay, E., 2014. Improving the efficiency enhancement of photonic crystal based InGan solar cell by using a GaN cap layer. Advances in Materials Science and Engineering, 2014.
- Jabri, S., Amiri, G., Sallet, V., Souissi, A., Meftah, A., Galtier, P. and Oueslati, M., 2016. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses. Physica B: Condensed Matter, 489, 93-98.
- Jepu, I., Porosnicu, C., Lungu, C., Mustata, I., Luculescu, C., Kuncser, V. and Ciupina, V., 2014. Combinatorial Fe–Co thin film magnetic structures obtained by thermionic vacuum arc method. Surface and Coatings Technology, 240, 344-352.
- Kaplan, H., Sarsıcı, S., Akay, S. and Ahmetoglu, M., 2017. The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc. Journal of Alloys and Compounds, 724, 543-548.
- Kazazis, S., Papadomanolaki, E., Androulidaki, M., Tsagaraki, K., Kostopoulos, A., Aperathitis, E. and Iliopoulos, E., 2016. Effect of rapid thermal annealing on polycrystalline InGaN thin films deposited on fused silica substrates. Thin Solid Films, 611, 46-51.
- Mori, T., Egawa, T. and Miyoshi, M., 2017. Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells. Materials Research Express, 4(8), 085904.
- Naz, S., Nawaz, H., Arshad, U., Ansari, F. and Shahzadi, R., 2017. Biogenic Synthesis of Silver Nanoparticles and Valuation of their Antimicrobial Activity against Dengue Larvae. J Plant Pathol Microbiol, 8(418), 2.
- Oliva, R., Segura, A., Ibáñez, J., Yamaguchi, T., Nanishi, Y. and Artús, L., 2014. Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride. Applied Physics Letters, 105(23), 232111.
- Özen, S., Şenay, V., Pat, S. and Korkmaz, Ş., 2016a. Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates. Materials Research Express, 3(4), 045012.
- Özen, S., Şenay, V., Pat, S. and Korkmaz, Ş., 2016b. Optical, morphological properties and surface energy of the transparent Li4Ti5O12 (LTO) thin film as anode material for secondary type batteries. Journal of Physics D: Applied Physics, 49(10), 105303.
- Park, J.-Y., Song, K. M., Min, Y.-S., Choi, C.-J., Kim, Y. S. and Lee, S.-N., 2015. Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes. Scientific reports, 5.
- Richardson, O., 1909. LXXVII. Thermionics. The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 17(102), 813-833.
- Schaake, C. A., Brown, D. F., Swenson, B. L., Keller, S., Speck, J. S. and Mishra, U. K., 2013. A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency. Semiconductor Science and Technology, 28(10), 105021.
- Shen, K.-C., Wang, T.-Y., Wuu, D.-S. and Horng, R.-H., 2012. High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target. Optics express, 20(14), 15149-15156.
- Sukserm, A., Pinsook, U. and Pluengphon, P., 2017. Structural phase transitions of Ga (Mn) N under high pressure. Journal of Physics: Conference Series, IOP Publishing, 012030.
- Yao, Y. and Klug, D. D., 2013. B 4− B 1 phase transition of GaN under isotropic and uniaxial compression. Physical Review B, 88(1), 014113.
- Yi, Z., Jin-Cheng, Z., Jun-Shuai, X., Xiao-Wei, Z., Sheng-Rui, X. and Yue, H., 2015. Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys. Chinese Physics B, 24(1), 017302.
Toplam 22 adet kaynakça vardır.
Ayrıntılar
| Birincil Dil | Türkçe |
|---|---|
| Konular | Mühendislik |
| Bölüm | Makaleler |
| Yazarlar | |
| Yayımlanma Tarihi | 28 Mayıs 2019 |
| Gönderilme Tarihi | 14 Şubat 2018 |
| Yayımlandığı Sayı | Yıl 2019 Cilt: 19 Sayı: 1 |