Skip to main content
SpringerLink
Log in

Study of Microstructure Features of the Surface Region of the Photovoltaic Converter with an Antireflective Porous Silicon Film and an n+—p Junction

  • Published:
Bulletin of the Lebedev Physics Institute Aims and scope Submit manuscript

Abstract

Using methods for measuring photocurrent and Raman scattering spectra the surface region microstructure of the silicon photovoltaic converter with n+—p junction and an antireflective porous silicon film is studied. The n+—p junction is formed by thermal diffusion of phosphorus from a porous film. It is found that high-temperature treatment during diffusion results in coarsening silicon crystallites and a decrease in the defect density in the porous silicon film. It is noted that the n+ —p junction is formed within the largest crystallites of the porous silicon film.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Handbook of Porous Silicon, Ed. by L. Canham (Springer International Publishing; Cham, Switzerland; 2014).

    Google Scholar 

  2. V. V. Tregulov and N. N. Mel’nik, RF Patent No. 2 662 254 (25 July 2018).

  3. V. V. Tregulov, V. G. Litvinov, and A. V. Ermachihin, Izv. Vyssh. Uchebn. Zaved. Fiz. 60(9), 94 (2017) [Russ. Phys. J. 60, 1565 (2018)].

    Google Scholar 

  4. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).

    Google Scholar 

  5. W. J. Salcedo, F. R. Fernandez, and J. C. Rubimc, Braz. J. Phys. 29, 751(1999).

    Article  ADS  Google Scholar 

  6. M. Yang, D. Huang, and P. Hao, J. Appl. Phys. 75, 651(1994).

    Article  ADS  Google Scholar 

  7. V. Lavrentiev, J. Vacik, V. Vorlicek, and V. Vosecek, Phys. Status Solidi B 247, 2022(2010).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    N. N. Mel’nik & V. L. Fedorov

  2. Yesenin Ryazan State University, ul. Svobody 46, Ryazan, 390000, Russia

    V. V. Tregulov

Authors
  1. N. N. Mel’nik
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. L. Fedorov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. V. Tregulov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to N. N. Mel’nik.

Additional information

Russian Text © N.N. Mel’nik, V.L. Fedorov, V.V. Tregulov, 2019, published in Kratkie Soobshcheniya po Fizike, 2019, Vol. 46, No. 1, pp. 23–29.

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Mel’nik, N.N., Fedorov, V.L. & Tregulov, V.V. Study of Microstructure Features of the Surface Region of the Photovoltaic Converter with an Antireflective Porous Silicon Film and an n+—p Junction. Bull. Lebedev Phys. Inst. 46, 36–39 (2019). https://doi.org/10.3103/S1068335619010111

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068335619010111

Keywords

Search

Navigation