Abstract
The recent researches and technological developments of middle and long wavelength infrared HgCdTe photovoltaic detectors are presented. Structure, topology, design and performance of HgCdTe photodiodes, silicon readout electronics, Focal Plane Arrays both staring and time delay and integration types, thermal imagers are discussed. Negative differential conductance, bistability and high frequency oscillations under background infrared radiation in HgCdTe photodiodes are reported.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Stafeev, V.I., Mercury Cadmium Telluride: Main Semiconductor Material of Modern IR Photoelectronics, Proc. SPIE, 2000, vol. 4340, p. 240.
Khrypov, V.T., Ponomarenko, V.P., Butkevich, V.G., et al., Opt. Eng., 1992, vol. 31, p. 678.
Ponomarenko, V.P. and Filachev, A.M., Photoelectronics for a New Generation of Electron-Optical Equipment, Proc. SPIE, 2002, vol. 5126, p. 1.
Bovina, L.A. and Stafeev, V.I., Mercury Cadmium Telluride Photodiodes and Focal Plane Arrays, Proc. SPIE, 1998, vol. 3819, p. 37.
Salmin, E.A., Shimansky, I.V., Ponomarenko, V.P., and Stafeev, V.I., Electron Mobility in Inversion Channels of p-Hg1 − x CdxTe Misfet’s, Acta Phys. Pol., 1990, vol. A 77, p. 237.
Berchenco, N.N., Bogoboyashchiy, V.V., Izhnin, I.I., et al., Properties of n-Layers Formed by Low Energy Ion Beam Milling of Chalcogenides Epitaxial Films, Phys. Stat. Sol., 2003, vol. 0, no. 3, p. 872.
Izhnin, I.I., Temperature Stability of the IBM Formed Hg1 − x CdxTe p-n Structure, Proc. SPIE, 1998, vol. 3890, p. 519.
Bovina, L.A., Boltar, K.O., Stafeev, V.I., et al., HgCdTe Photodiode Performance Degradation, Proc. SPIE, 1998, vol. 3819, p. 73.
Varavin, V.S., Vasiliev, V.V., Dvoretsky, S.A., et al., HgCdTe Epilayers on GaAs: Growth and Devices, Optoelectronics Review, 2003, vol. 11, no. 2, p. 99.
Stafeev, V.I., Sov. Phys. Solid State, 1960, no. 2, p. 454.
Ponomarenko, V.P. and Stafeev, V.I., Tr. Mosk. Fiz.-Tekh. Inst., Ser.: Radiotekh. Elektron., 1974, vol. 7, p. 57.
Boltar, K.O., Bovina, L.A., Saginov, L.D., Soliakov, V.N., and Stafeev, V.I., Negative Conductivity in HgCdTe Photodiodes, Proc. SPIE, 1998, vol. 3819, p. 46.
Bovina, L.A., Ponomarenko, V.P., Stafeev, V.I., and Logunenko, Y.M., Abstracts of 10th International Opt.-Electron. Congress (Germany, 1991), p. 137.
Bovina, L.A., Boltar, K.O., Bourlakov, I.D., et al., 128 × 128 and 384 × 288 Staring HgCdTe Focal Plane Arrays, Proc. SPIE, 1998, vol. 3819, p. 9.
Boltar, K.O. and Iakovleva, N.I., Sensitive Element Dimensions Measurements in Focal Plane Arrays, Proc. SPIE, 1998, vol. 3819, p. 40.
Bovina, L.A., Boltar, K.O., Bourlakov, I.D., et al., 384 × 288 HgCdTe Staring Focal Plane Arrays on the Base of Mercury Cadmium Telluride, Proc. SPIE, 2000, vol. 4340, p. 23.
Bovina, L.A., Boltar, K.O., Bourlakov, I.D., et al., Focal Arrays Based on HgCdTe Photodiodes for the 3–5-and 8–12-μm Spectral Regions, Opt. Technol., 1996, vol. 63, no. 6, p. 478.
Saginov, L.D., Solyakov, V.N., Mansvetov, N.G., et al., LWIR 2 × 256 Focal Plane Array for Time Delay and Integration, Proc. SPIE, 2003, vol. 5126, p. 105.
Bovina, L.A., Bourlakov, I.D., Ivanov, V.I., et al., Linear HgCdTe Scanning Focal Plane Arrays with Time Delay and Integration, Proc. SPIE, 1998, vol. 3819, p. 2.
Boltar, K.O., Yakovleva, N.I., Golovin, S.V., et al., 128 × 128 MWIR FPA on the Base of Epitaxial Layer MCT Grown by MOCVD, Proc. of SPIE, 2003, vol. 5126, p. 86.
Boltar, K.O., Bovina, L.A., Saginov, L.D., et al., IR Imager Based on 128 × 128 HgCdTe Staring Focal Plane Array, Proc. SPIE, 1998, vol. 3819, p. 92.
Author information
Authors and Affiliations
Corresponding author
About this article
Cite this article
Boltar, K.O., Burlakov, I.D., Filachev, A.M. et al. Single and matrix HgCdTe photovoltaic detectors. Opt. Mem. Neural Networks 16, 234–247 (2007). https://doi.org/10.3103/S1060992X07040066
Received:
Issue Date:
DOI: https://doi.org/10.3103/S1060992X07040066