The Selete research and development program was started to prepare extreme ultraviolet (EUV) lithography for the manufacturing of semiconductor devices. In the past five years, Selete has evaluated more than 1000 EUV resists from resist suppliers using the small field exposure tool (SFET) which is linked in-line to a coater / developer track system under chemically controlled environments. From the results obtained, the lithographic performance of various Selete standard resists (SSRs) and optimization of related processes has been reported. Based on these, advancement in resist materials was observed to be of steady progress in terms of resolution limit, sensitivity and line width roughness (LWR). LWR reduction and pattern collapse prevention were also achieved through the application of various alternative processes. One such alternative process is the application of the aqueous solution of tetrabutylammonium hydroxide (TBAH) instead of the conventional tetramethylammonium hydroxide developer. TBAH was found to be most effective in the suppression of resist film swelling which causes pattern collapse. Alternative rinse solutions evaluated and utilized have also allowed improvements in LWR reduction and pattern collapse. Meanwhile, EUV resist outgassing, which is also a concern for the effective application of EUV lithography, was quantified and analyzed. Analysis results have shown that protecting group and photo-acid generator components of EUV resists are the main source of such outgassing during exposure. Moreover, for fundamental research, a new approach using high speed atomic force microscopy in the in situ analysis of resists during the dissolution and rinse processes is presented. The results obtained with this method supported a number of previous assumptions about resist dissolution and rinse mechanisms which presented potential pointers for use in next-generation lithographic applications.